This document describes the absolute maximum ratings and electrical characteristics of the FJX3906 PNP epitaxial silicon transistor. It provides the maximum rated values for collector-base voltage, collector-emitter voltage, emitter-base voltage, collector current, collector power dissipation, and storage temperature. In addition, it provides the electrical characteristics for collector-base breakdown voltage, collector-emitter breakdown voltage, emitter-base breakdown voltage, collector cut-off current, DC current gain, collector-emitter saturation voltage, base-emitter saturation voltage, current gain bandwidth product, output capacitance, noise figure, turn on time, and turn off time.
This document provides technical specifications for the Fairchild Semiconductor FJX3906, a general-purpose PNP epitaxial silicon transistor. It lists absolute maximum ratings such as collector-emitter voltage of -40 V and collector current of -200 mA.
The datasheet includes electrical characteristics like DC current gain (hFE) ranging from 60 to 300 depending on conditions, along with switching times and noise figure. Package information indicates the device is available in a SOT-323 package.
| Emitter-Base Voltage (VEBO) | 5 V |
|---|---|
| Collector Current (IC) | -200 mA |
| Collector Power Dissipation (PC) | 350 mW |
| Storage Temperature Range | -55 ~ 150 °C |
The current gain bandwidth product (fT) is 250 MHz when tested at a collector current of -10 mA and VCE of -20V.
The device can be stored at temperatures between -55 and 150 °C.