FJX3904 is an NPN epitaxial silicon transistor used for general purposes. It has a collector-base voltage of 60V, collector-emitter voltage of 40V, and emitter-base voltage of 6V. It also has a collector current of 200mA and collector power dissipation of 350mW.
This document is a datasheet for the Fairchild Semiconductor FJX3904, an NPN epitaxial silicon transistor designed for general-purpose applications. It provides absolute maximum ratings, electrical characteristics, and typical performance characteristics.
| Collector-Base Voltage | 60 V |
|---|---|
| Collector-Emitter Voltage | 40 V |
| Emitter-Base Voltage | 6 V |
| Collector Current | 200 mA |
| Collector Power Dissipation | 350 mW |
| Storage Temperature | -55 ~ 150 °C |
| Package Type | SOT-323 |
The maximum collector current is 200 mA.
The FJX3904 transistor uses the SOT-323 package.
The storage temperature range is from -55 to 150 °C.