This document describes the features and characteristics of RFD16N05L and RFD16N05LSM, which are N-Channel logic level power MOSFET devices. It includes their power control, conductance, gate bias range, special gate oxide design, switching speed, etc.
This document is a datasheet for the Fairchild RFD16N05L and RFD16N05LSM N-Channel Power MOSFETs. These devices are manufactured using the MegaFET process and are designed for use with logic level driving sources in applications such as programmable controllers, switching regulators, and motor relay drivers. They feature a special gate oxide design that provides full rated conductance at gate biases in the 3V to 5V range.
| Operating and Storage Temperature | -55 to 150 °C |
|---|---|
| Turn-Off Time (Typ) | 100 ns |
The RFD16N05L is available in TO-251AA and TO-252AA packages.
Yes, they can be driven directly from CMOS, NMOS, and TTL circuits.