NDT014 N-Channel Enhancement Mode Field Effect Transistor is a power field effect transistor produced using Fairchild's proprietary high cell density DMOS technology. It features extremely low on-state resistance and superior switching performance. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.
This document is a datasheet for the NDT014, an N-channel enhancement mode power field effect transistor produced using Fairchild's proprietary high cell density DMOS technology. The device is designed for low voltage applications such as DC motor control and DC/DC conversion, offering fast switching, low in-line power loss, and resistance to transients. It is available in a surface mount SOT-223 package.
The datasheet provides absolute maximum ratings, electrical characteristics, and dynamic characteristics including switching times and capacitance. It also includes typical electrical characteristics graphs illustrating on-region behavior, on-resistance variation, transfer characteristics, and safe operating areas under various temperature and current conditions.
| Drain-Source Voltage | 60 V |
|---|---|
| Gate-Source Voltage | +20 V |
| Pulsed Drain Current | 10 A |
| Operating Temperature Range | -65 to 150 °C |
| Package Type | SOT-223 |
The operating and storage temperature range is -65 to 150 °C.
This device is suited for low voltage applications such as DC motor control and DC/DC conversion.
The maximum continuous drain current is 2.7 A.