This document describes the features and characteristics of the NDT454P P-Channel Enhancement Mode Field Effect Transistor, released in June 1996. The product is a power field effect transistor produced using high cell density DMOS technology, providing low on-state resistance and superior switching performance. It is particularly suitable for low voltage applications such as notebook computer power management and other battery powered circuits, where fast switching, low power loss, and resistance to transients are required.
The document describes the Fairchild NDT454P, a power SOT-223 package P-channel enhancement mode field effect transistor. It utilizes high cell density DMOS technology designed to minimize on-state resistance and provide superior switching performance for low voltage applications such as notebook computer power management.
| Drain-Source Voltage | -30 V |
|---|---|
| Package Type | SOT-223 |
| Maximum Power Dissipation (Still Air) | 1.4 W |
| Operating Temperature Range | -65 to 150 °C |
It is a P-Channel Enhancement Mode Field Effect Transistor.
The device supports a continuous drain current of 5.9 A and a maximum power dissipation of 3 W.
The device operates within a temperature range from -65 to 150 °C.