RFD14N05L, RFD14N05LSM, RFP14N05L are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V-5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA09870.
This document is a data sheet for Fairchild Semiconductor's RFD14N05L, RFD14NO5LSM, and RFP14NO5L N-channel power MOSFETs. These devices utilize the MegaFET process and are designed for applications such as switching regulators, switching converters, motor drivers, and relay drivers. They feature a special gate oxide design that allows for full rated conductance at gate biases in the 3V-5V range, facilitating direct control from logic-level integrated circuits.
| Power Dissipation | 48 W |
|---|---|
| Turn-On Time | 60 ns |
Yes, they can be driven directly from CMOS, NMOS, and TTL circuits.
The typical gate threshold voltage is 1.5 V.