The NDS9945 is a N-Channel enhancement mode power field effect transistor produced by Fairchild using its proprietary, high cell density, DMOS technology. This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance. These devices are particularly suited for low voltage applications such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
The document describes the Fairchild NDS9945, a dual N-Channel Enhancement Mode Field Effect Transistor produced using proprietary DMOS technology. It is specifically tailored to provide superior switching performance and minimize on-state resistance, making it suitable for low voltage applications such as disk drive motor control and battery-powered circuits.
| Drain-Source Voltage (Voss) | 60 V |
|---|---|
| Pulsed Drain Current (If) | 10 A |
| Power Dissipation for Dual Operation | 2 W |
| Operating and Storage Temperature Range | -55 to 150 °C |
The NDS9945 supports a continuous drain current of 3.5 A and a pulsed drain current of 10 A.
The device can dissipate a maximum of 2 W for dual operation.
The device operates and can be stored within a temperature range of -55 to 150 °C.