NDT452AP P-Channel Enhancement Mode Field Effect Transistor is a power field effect transistor that uses Fairchild's proprietary high cell density DMOS technology, which has extremely low RDS(ON) and superior switching performance.
This document is a datasheet for the Fairchild Semiconductor NDT452AP, a P-Channel Enhancement Mode Field Effect Transistor (FET). The device utilizes a high cell density DMOS technology designed to minimize on-state resistance and provide superior switching performance for low voltage applications such as notebook computer power management and DC motor control. It is available in a widely used surface mount SOT-223 package.
| Drain-Source Voltage | -30 V |
|---|---|
| Gate-Source Voltage | +20 V |
| Pulsed Drain Current | -15 A |
| Operating Temperature Range | -65 to 150 °C |
| Package Type | SOT-223 |
The maximum continuous drain current is 5 A.
The maximum power dissipation is 3 W.
The operating and storage temperature range is -65 to 150 °C.