The document describes the features and characteristics of the NDT456P P-Channel Enhancement Mode Field Effect Transistor manufactured in December 1998. The transistor has a drain-source voltage of -30V, gate-source voltage of ±20V, and maximum drain current of -7.5A. It is produced using a high-density cell design, providing extremely low on-state resistance and high power and current handling capability. It is suitable for low voltage applications such as notebook computer power management, battery powered circuits, and DC motor control.