The document describes the features and characteristics of the NDT456P P-Channel Enhancement Mode Field Effect Transistor manufactured in December 1998. The transistor has a drain-source voltage of -30V, gate-source voltage of ±20V, and maximum drain current of -7.5A. It is produced using a high-density cell design, providing extremely low on-state resistance and high power and current handling capability. It is suitable for low voltage applications such as notebook computer power management, battery powered circuits, and DC motor control.
This document is a datasheet for the Fairchild Semiconductor NDT456P, a P-Channel enhancement mode power field effect transistor. The device is produced using Fairchild's proprietary, high cell density, DMOS technology to minimize on-state resistance and provide superior switching performance. It is particularly suited for low voltage applications such as notebook computer power management, battery powered circuits, and DC motor control.
| Drain-Source Voltage | -30 V |
|---|---|
| Gate-Source Voltage | +20 V |
| Continuous Drain Current | -7.5 A |
| Pulsed Drain Current | -20 A |
| Maximum Power Dissipation | 3 W |
| Operating Temperature Range | -65 to 150 °C |
| Thermal Resistance Junction-to-Ambient | 42 °C/W |
| Thermal Resistance Junction-to-Case | 12 °C/W |
The maximum continuous drain current is -7.5 A.
The maximum power dissipation is 3 W.
The operating and storage temperature range is -65 to 150 °C.