NDT451AN N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.
This document is a datasheet for the Fairchild Semiconductor NDT451AN, an N-Channel Enhancement Mode Field Effect Transistor (FET) produced using proprietary DMOS technology. The device is designed for low voltage applications such as DC motor control and DC/DC conversion, offering fast switching and low in-line power loss. It is packaged in a widely used surface mount SOT-223 package.
| Drain-Source Voltage | 30 V |
|---|---|
| Gate-Source Voltage | +20 V |
| Continuous Drain Current | +7.2 A |
| Pulsed Drain Current | 425 A |
| Maximum Power Dissipation | 3 W |
| Operating Temperature Range | -65 to 150 °C |
| Thermal Resistance, Junction-to-Ambient | 42 °C/W |
| Thermal Resistance, Junction-to-Case | 12 °C/W |
| Static Drain-Source On-Resistance | 0.035 Ω |
| Package Type | SOT-223 |
The maximum continuous drain current is +7.2 A.
The maximum power dissipation is 3 W when mounted on a 1 in² pad of 2oz copper.
The operating and storage temperature range is -65 to 150 °C.