The NDT3055 is a N-channel enhancement mode field effect transistor with a maximum current of 4 A and a maximum voltage of 60 V. It has extremely low RDS(ON) and high power and current handling capability. This device is particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.
The document describes the Fairchild NDT3055, an N-Channel enhancement mode power field effect transistor produced using proprietary high cell density DMOS technology. It is designed to minimize on-state resistance and provide superior switching performance for low voltage applications such as DC motor control and DC/DC conversion.
The datasheet details absolute maximum ratings including a drain-source voltage of 60V, continuous drain current of 4A, and power dissipation up to 3W. It also lists electrical characteristics for off-state and on-state conditions, dynamic parameters like capacitance, switching times, and gate charge, as well as typical performance graphs.
| Drain-Source Voltage | 60 V |
|---|---|
| Maximum Drain Current - Continuous | 4 A |
| Maximum Power Dissipation | 3 W |
| Operating and Storage Temperature Range | -65 to 150 °C |
| Thermal Resistance, Junction-to-Ambient | 42 °C/W |
| Static Drain-Source On-Resistance | 0.084 Ω |
| Input Capacitance | 250 pF |
The device supports a maximum continuous drain current of 4 A and a maximum power dissipation of 3 W.
The device operates within a temperature range from -65 to 150 °C.
The absolute maximum drain-source voltage is rated at 60 V.