This document describes the features and characteristics of the 60V P-Channel enhancement mode field effect transistor produced by Fairchild Semiconductor. It is primarily used for power management applications.
The document describes the Fairchild Semiconductor NDT2955, a 60V P-Channel MOSFET produced using the company's high voltage Trench process. It is specifically optimized for power management applications such as DC/DC converters.
Key features include a high density cell design for extremely low on-resistance and high power/current handling capability in a widely used surface mount package (SOT-223). The device operates within a junction temperature range of 55°C to +150°C.
| Drain-Source Voltage | -60 V |
|---|---|
| Gate-Source Voltage | +20 V |
| Operating Junction Temperature Range | -55 to +150 °C |
| Package Type | SOT-223 (232) |
The maximum continuous drain current is 2.5 A.
The maximum power dissipation is 3.0 W.
The operating junction temperature range is -55 to +150 °C.