This document introduces ND3055L, a logic level N-channel enhancement mode power field effect transistor. It has a maximum current of 4A and a maximum voltage of 60V. The product uses Fairchild's proprietary high density DMOS technology and has extremely low on-state resistance and superior switching performance. It is particularly suitable for low voltage applications such as DC motor control and power conversion.
The document describes the NDT3055L, an N-Channel Logic Level Enhancement Mode Field Effect Transistor produced using Fairchild's proprietary high cell density DMOS technology. These devices are designed to minimize on-state resistance and provide superior switching performance, making them suitable for low voltage applications such as DC motor control and DC/DC conversion.
| Drain-Source Voltage | 60 V |
|---|---|
| Maximum Drain Current - Continuous | 4 A |
| Maximum Power Dissipation | 3 W |
| Operating and Storage Temperature Range | -65 to 150 °C |
| Thermal Resistance, Junction-to-Ambient | 42 °C/W |
| Thermal Resistance, Junction-to-Case | 12 °C/W |
| Gate Threshold Voltage | 1 to 2 V |
| Static Drain-Source On-Resistance | 0.07 to 0.1 Ohm |
The maximum drain-source voltage is 60 V.
The operating and storage temperature range is -65 to 150 °C.