FQPF22P10 is a 100V P-Channel MOSFET manufactured by Fairchild with low on-state resistance, superior switching performance, high energy pulse withstand capability, low gate charge, low Crss, fast switching, 100% avalanche tested, improved dv/dt capability and 175°C maximum junction temperature rating.
This document describes the Fairchild FQPF22P10, a P-Channel enhancement mode power MOSFET produced using proprietary planar stripe DMOS technology. The device is designed to minimize on-state resistance and provide superior switching performance for applications such as audio amplifiers, high efficiency DC/DC converters, and motor control.
| Drain-Source Voltage | -100 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 13.2 A |
| Power Dissipation (Tj = 25°C) | 45 W |
| Maximum Junction Temperature | +175 °C |
| Package Type | TO-220F |
The device supports a continuous drain current of -13.2 A at Tg = 25°C and -9.3 A at Tg = 100°C.
The maximum junction temperature rating for this device is 175°C.
Power dissipation is rated at 45 W when the case temperature (Tg) is 25°C.