This manual introduces the functions and usage of QFET.
This document provides design specifications and technical data for the FQPF22N30, an N-Channel enhancement mode power MOSFET produced using Fairchild's proprietary planar stripe DMOS technology. The device is designed to minimize on-state resistance while providing superior switching performance and high energy pulse withstand capability in avalanche and commutation modes.
| Drain-Source Voltage | 300 V |
|---|---|
| Continuous Drain Current (25°C) | 12 A |
| Power Dissipation (25°C) | 56 W |
| Operating Temperature Range | -55 to +150 °C |
| On-Resistance (Typical) | 0.162 Ω |
The device operates and can be stored within a temperature range of -55 to +150 °C.