FQPF5N90 is a 900V N-channel MOSFET with features like low on-resistance, fast switching, 100% avalanche tested, improved dv/dt capability.
The document describes the Fairchild FQPF5N90, a 900V N-Channel enhancement mode power field effect transistor produced using Fairchild's proprietary planar stripe DMOS technology. Key features include a 3.0A continuous drain current, low on-state resistance of 2.3 Ω, and fast switching capabilities suitable for high-efficiency switch mode power supplies. This manual is written in Chinese.
| Drain-Source Voltage | 900 V |
|---|---|
| Continuous Drain Current (TC = 25°C) | 3.0 A |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Package Type | TO-220F |
The maximum continuous drain current is 3.0 A when the case temperature is 25°C.
The device has a maximum drain-source voltage rating of 900 V.
The maximum power dissipation is 51 W at a case temperature of 25°C.