The FQPF27P06 is a 60V P-channel MOSFET that features low gate charge, low Crss, and fast switching. It is well-suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
This document is a technical datasheet for the Fairchild Semiconductor FQPF27P06, a P-Channel enhancement mode power field effect transistor. The device utilizes proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance.
The FQPF27P06 features an absolute maximum drain-source voltage of -60V and a continuous drain current of -17A at 25°C. It is well-suited for low voltage applications including automotive systems, DC/DC converters, and high-efficiency power management in portable products.
| Drain-Source Voltage | -60 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | -17 A |
| Pulsed Drain Current | -68 A |
| Maximum Junction Temperature | +175 °C |
| On-Resistance (Typical) | 0.072 Ω |
| Package Type | TO-220F |
The maximum junction temperature rating is 175°C.