FQPF30N06L is a 60V logic N-channel MOSFET produced by Fairchild Semiconductor Corporation. Its features include low on-state resistance, superior switching performance, high energy pulse endurance and low gate charge and Crss. This device is well suited for low voltage applications such as automotive, DC/DC converters and high efficiency switching for power management in portable and battery operated products.
This document is a datasheet for the Fairchild FQPF30N06L, a 60V logic-level N-channel enhancement mode power MOSFET. The device utilizes proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance. It is well-suited for low voltage applications such as automotive systems, DC/DC converters, and high-efficiency switching for power management in portable products.
The datasheet provides absolute maximum ratings, electrical characteristics, and typical characteristics including graphs for on-resistance, capacitance, and safe operating areas. It also includes test circuit diagrams for gate charge, resistive switching, unclamped inductive switching, and peak diode recovery dv/dt, along with package dimensions for the TO-220F case.
| Drain-Source Voltage | 60 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 22.5 A |
| Continuous Drain Current (Tj = 100°C) | 15.9 A |
| Pulsed Drain Current | 90 A |
| Gate-Source Voltage | +20 V |
| Single Pulsed Avalanche Energy | 350 mJ |
| Power Dissipation (Tj = 25°C) | 38 W |
| Operating Junction Temperature Range | -55 to +175 °C |
| Thermal Resistance, Junction-to-Case | 3.9 °C/W |
| Thermal Resistance, Junction-to-Ambient | 62.5 °C/W |
| On-Resistance (Vgs = 10V) | 0.035 Ω |
| Input Capacitance | 1040 pF |
| Output Capacitance | 350 pF |
| Reverse Transfer Capacitance | 65 pF |
| Package Type | TO-220F |
The maximum junction temperature rating is 175°C.
The typical gate charge is 15 nC.
The typical Crss is 50 pF.
Yes, the device is 100% avalanche tested.