QFET is a new type of power switch device developed by ON Semiconductor. It has the advantages of small size, large power, fast switching speed, and low switching loss. QFET is suitable for various power applications, such as switch power supplies, motor drives, LED drives, etc.
This document provides design specifications and electrical characteristics for the FQPF5N40, an N-Channel enhancement mode power MOSFET produced using Fairchild's proprietary planar stripe DMOS technology. The device is optimized to minimize on-state resistance and provide superior switching performance.
The datasheet details absolute maximum ratings, including a drain-source voltage of 400V and continuous drain current up to 3.0A at 25°C. It also lists electrical characteristics such as input capacitance, output capacitance, turn-on delay time, and reverse recovery charge, along with typical performance graphs.
| Drain-Source Voltage (V_DSS) | 400 V |
|---|---|
| Continuous Drain Current (I_D) | 3.0 A |
| Pulsed Drain Current (I_DM) | 12 A |
| Power Dissipation (T_C = 25°C) | 35 W |
| Operating Temperature Range | -55 to +150 °C |
| Total Gate Charge (Q_g) | Typical 10 nC |
The device uses a TO-220F package.
Yes, it is 100% avalanche tested.