FQPF33N10 is a N-channel enhancement mode power field effect transistor produced by Fairchild using Fairchild's proprietary planar stripe DMOS technology. It features low on-state resistance, superior switching performance and high energy pulse withstandability. It is well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters and DC motor control.
The FQPF33N10 is an N-Channel enhancement mode power field effect transistor produced using Fairchild's proprietary planar stripe, DMOS technology. These devices are designed to minimize on-state resistance and provide superior switching performance, making them suitable for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.
| Drain-Source Voltage | 100 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 18 A |
| Continuous Drain Current (Tj = 100°C) | 12.7 A |
| Pulsed Drain Current | 72 A |
| Gate-Source Voltage | ±25 V |
| Single Pulsed Avalanche Energy | 430 mJ |
| Power Dissipation (Tj = 25°C) | 41 W |
| Operating and Storage Temperature Range | -55 to +175 °C |
| Package Type | TO-220F |
The maximum junction temperature rating is 175°C.
These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
The typical gate charge is 38 nC.