FQPF6N80T is a 800V N-channel MOSFET from Fairchild with a maximum continuous current of 3.3A and a 1.95 ohm on-state resistance, low gate charge and fast switching characteristics.
The document describes the FQPF6N80T, an N-Channel enhancement mode power field effect transistor produced using Fairchild's proprietary planar stripe, DMOS technology. Key features include a low on-state resistance of 1.952 ohms, low gate charge, and fast switching capabilities, making it suitable for high-efficiency switch mode power supplies.
| Drain-Source Voltage | 800 V |
|---|---|
| Continuous Drain Current (Tg = 25°C) | 3.3 A |
| On-Resistance | 1.95 Q |
| Package Type | TO-220F Potted |
| Operating Temperature Range | -55 to +150 °C |
The part can dissipate up to 51 W when the case temperature is maintained at 25°C.
The device operates and stores within a range of -55 to +150 °C.