This document describes the features and characteristics of the FQP4N80 QFET TM FQP4N80 800V N-Channel MOSFET, including low on-state resistance, low gate charge, fast switching, etc. It is suitable for high efficiency switch mode power supplies.
The document describes the Fairchild FQP4N80, an N-Channel enhancement mode power field effect transistor produced using Fairchild's proprietary planar stripe DMOS technology. The device is designed to minimize on-state resistance and provide superior switching performance for high efficiency switch mode power supply applications. This manual is written in Chinese.
| Drain-Source Voltage | 800 V |
|---|---|
| Continuous Drain Current (25°C) | 3.9 A |
| On-Resistance | 3.6 Ω |
| Gate Charge (Typical) | 19 nC |
| Reverse Transfer Capacitance | 8.6 pF |
| Operating Temperature Range | -55 to +150 °C |
| Thermal Resistance Junction-to-Case | 0.96 °C/W |
The device supports a maximum continuous drain current of 3.9 A at 25°C and can withstand a maximum drain-source voltage of 800 V.
The static drain-source on-resistance (RDS(on)) is 3.6 Ω when the gate-source voltage is set to 10 V.
The device operates between -55°C and +150°C, with a maximum lead soldering temperature of 300°C.