This document describes the features and characteristics of the FQP5N60C/FQPF5N60C 600V N-Channel MOSFET. These devices are produced using Fairchild's proprietary planar stripe DMOS technology, which minimizes on-state resistance, provides superior switching performance, and withstands high energy pulse in the avalanche and commutation mode. They are well suited for high efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts based on half bridge topology.
This document provides design specifications for the FQP5N60C and FQPF5N60C, which are 4.5A, 600V N-Channel MOSFETs produced using Fairchild's proprietary planar stripe DMOS technology. These devices are designed to minimize on-state resistance while providing superior switching performance and high energy pulse withstand capability in avalanche and commutation modes.
| Drain-Source Voltage | 600 V |
|---|---|
| Power Dissipation (Tg = 25°C) | 100 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction-to-Case | 1.25 CW (FQP5N60C) |
| Gate Threshold Voltage | 2.0 to 4.0 V |
| Total Gate Charge | 15 to 19 nC |
The operating and storage temperature range is from -55 to +150 °C.