FQP55N10 is a Fairchild N-channel enhancement mode power field effect transistor produced using Fairchild's proprietary planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
This document provides the design specifications for the Fairchild FQP55N10, a 100V N-Channel enhancement mode power field effect transistor produced using proprietary DMOS technology. The device is designed to minimize on-state resistance and provide superior switching performance for low voltage applications such as audio amplifiers and DC motor control.
| Drain-Source Voltage | 100 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 55 A |
| On-Resistance | 0.0262 Ohms |
| Maximum Junction Temperature | 175°C |
| Package Type | TO-220 |
The maximum junction temperature rating is 175°C.
The typical gate charge is 75 nC.
The typical reverse transfer capacitance (Crss) is 130 pF.