FQP50N06L is a 60V logic N-channel MOSFET produced by Fairchild, with the characteristics of low on-state resistance, fast switching and 175°C maximum junction temperature
This document provides design specifications and electrical characteristics for the Fairchild FQP50N06L, an N-Channel enhancement mode power field effect transistor. The device utilizes proprietary planar stripe DMOS technology tailored to minimize on-state resistance and provide superior switching performance.
The datasheet details absolute maximum ratings, including a drain-source voltage of 60V and continuous drain current up to 52.4A at 25°C. It also lists electrical characteristics such as gate threshold voltage, static drain-source on-resistance, and dynamic capacitance values.
| Drain-Source Voltage | 60 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 52.4 A |
| Maximum Junction Temperature | +175 °C |
| Power Dissipation (Tj = 25°C) | 121 W |
| Static Drain-Source On-Resistance | 0.017 - 0.021 Ohms |
| Package Type | TO-220 |