The FQP4P40 is a 400V P-Channel MOSFET produced by Fairchild Semiconductor. This device has -3.5A, -400V, RDS(on) = 3.1Ω @VGS = -10 V, low gate charge (typical 18 nC), low Crss (typical 11 pF), fast switching, 100% avalanche tested and improved dv/dt capability.
This document is a datasheet for the Fairchild FQP4P40, a P-Channel enhancement mode power field effect transistor. Produced using Fairchild's proprietary planar stripe, DMOS technology, the device is designed to minimize on-state resistance and provide superior switching performance. It is well-suited for electronic lamp ballast applications based on complementary half bridges.
The datasheet provides absolute maximum ratings, electrical characteristics, and typical characteristics including on-resistance variation, capacitance, and switching times. It also details the package dimensions for the TO-220 package and includes test circuit diagrams for gate charge, resistive switching, and unclamped inductive switching.
| Drain-Source Voltage | -400 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | -3.5 A |
| Continuous Drain Current (Tj = 100°C) | -2.2 A |
| Pulsed Drain Current | -14 A |
| Power Dissipation (Tg = 25°C) | 85 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| On-Resistance | 3.19 mΩ @ Vgs = -10 V |
| Package Type | TO-220 |
The device is produced using Fairchild's proprietary, planar stripe, DMOS technology.
Yes, the device is 100% avalanche tested.