FQP65N06 60V N-Channel MOSFET is a N-Channel enhancement mode power field effect transistor produced by Fairchild Semiconductor Corporation. This product uses Fairchild's proprietary planar stripe DMOS technology, which has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.
This document is a technical datasheet for the Fairchild Semiconductor FQP65N06, an N-Channel enhancement mode power field effect transistor. The device utilizes proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance.
The FQP65N06 is designed for low voltage applications including automotive systems, DC/DC converters, and high-efficiency switching in portable battery-operated products. Key features include a maximum continuous drain current of 65A at 25°C, a drain-source breakdown voltage of 60V, and an on-state resistance (RDS(on)) of 0.016Ω @ VGS = 10V.
| Drain-Source Voltage (VDSS) | 60 V |
|---|---|
| Continuous Drain Current (ID) at TC = 25°C | 65 A |
| Static Drain-Source On-Resistance (RDS(on)) | 0.016 Ω @ VGS = 10 V |
| Maximum Junction Temperature (TJ) | +175 °C |
| Package Type | TO-220 |
The maximum continuous drain current (ID) at a case temperature of 25°C is 65 A.
The static drain-source on-resistance (RDS(on)) is 0.016 Ω when VGS is 10 V and ID is 32.5 A.
Yes, the devices are 100% avalanche tested.