FQP47P06 is a 60V P-channel MOSFET from Fairchild Semiconductor. It features low RDS(on), low gate charge, low Crss, fast switching, 100% avalanche tested, improved dv/dt capability and 175°C maximum junction temperature rating.
This document describes the Fairchild FQP47P06, a P-Channel enhancement mode power field effect transistor produced using proprietary planar stripe DMOS technology. The device is optimized for low voltage applications such as automotive systems, DC/DC converters, and high-efficiency switching in portable products. Key features include a maximum drain-source voltage of -60V, a continuous drain current of -47A at 25°C, and a maximum junction temperature rating of 175°C.
| Drain-Source Voltage | -60 V |
|---|---|
| Continuous Drain Current (Tj=25°C) | -47 A |
| Continuous Drain Current (Tj=100°C) | -33.2 A |
| Pulsed Drain Current | -188 A |
| Maximum Junction Temperature | 175°C |
| On-Resistance | 0.026 Ω |
| Gate Charge (Typical) | 84 nC |
| Reverse Transfer Capacitance | 320 pF |
The maximum junction temperature rating is 175°C.
The typical gate charge is 84 nC.
Yes, the device is 100% avalanche tested.