QFET QFET QFET QFET is a high-performance power device produced by Philips. It uses advanced process technology and has the characteristics of high voltage, high current and low power consumption. It is widely used in industrial, automotive, consumer electronics and other fields.
This document is a datasheet for the Fairchild Semiconductor FQP46N15, a 150V N-Channel enhancement mode power field effect transistor. The device utilizes proprietary planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance. It is well-suited for low voltage applications such as audio amplifiers, high efficiency switching for DC/DC converters, and DC motor control.
| Drain-Source Voltage | 150 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 45.6 A |
| Continuous Drain Current (Tc = 100°C) | 32.2 A |
| Pulsed Drain Current | 182.4 A |
| Gate-Source Voltage | -25 V |
| Power Dissipation (Tc = 25°C) | 210 W |
| Operating and Storage Temperature Range | -55 to +175 °C |
| Package Type | TO-220 |
The maximum junction temperature rating is 175°C.
The typical gate charge is 85 nC.
The typical on-state resistance is 0.0422 Ohms at Vgs = 10 V.