This document describes the features and characteristics of the FQP45N15V2/FQPF45N15V2 N-Channel enhancement mode power field effect transistors, including low on-state resistance, superior switching performance, and the ability to withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for DC to DC converters, synchronous rectification, and other applications where low Rds(on) is required.
This document is a technical datasheet for the Fairchild Semiconductor FQP45N15V2 and FQPF45N15V2, which are 150V N-Channel enhancement mode power field effect transistors. Produced using proprietary planar stripe DMOS technology, these devices are designed to minimize on-state resistance while providing superior switching performance and high energy pulse withstand capabilities in avalanche and commutation modes.
| Drain-Source Voltage | 150 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 45 A |
| On-Resistance (Typical) | 9.0 mΩ @ Vgs = 10V |
| Gate Charge (Typical) | 72 nC |
| Operating Temperature Range | -55 to +150 °C |
The FQP45N15V2 and FQPF45N15V2 can withstand a single pulsed avalanche energy of 1124 mJ.
The maximum power dissipation rating is 220 W for the FQP45N15V2 and 66 W for the FQPF45N15V2 when the case temperature is 25°C.