This document describes the features and characteristics of the FQP3P50 500V P-Channel MOSFET product produced by Fairchild, including low on-state resistance, fast switching, and high energy pulse withstand capability.
The document describes the Fairchild FQP3P50, a P-Channel enhancement mode power MOSFET produced using proprietary planar stripe DMOS technology. Key features include a drain-source voltage of -500V, continuous drain current of -2.7A at 25°C, and low gate charge typical of 18 nC.
| Drain-Source Voltage | -500 V |
|---|---|
| Continuous Drain Current (Tg = 25°C) | -2.7 A |
| Power Dissipation (Tg = 25°C) | 85 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
The maximum continuous drain current is -2.7 A when the temperature is 25°C.
The maximum drain-source voltage is -500 V.
The maximum power dissipation is 85 W at 25°C.