This document describes the features and characteristics of FQP3P20 200V P-Channel MOSFET, including low on-state resistance, fast switching, high energy pulse withstand, and suitability for high efficiency switching DC/DC converters.
The document describes the Fairchild FQP3P20, a P-Channel enhancement mode power MOSFET produced using proprietary planar stripe DMOS technology. Key features include low on-state resistance, superior switching performance, and 100% avalanche testing. The device is well-suited for high efficiency switching DC/DC converters.
| Drain-Source Voltage | -200 V |
|---|---|
| Continuous Drain Current (Tg = 25°C) | -2.8 A |
| Power Dissipation (To = 25°C) | 52 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Package Type | TO-220 |
The maximum continuous drain current is -2.8 A when the temperature is 25°C.
The maximum drain-source voltage rating is -200 V.
The typical gate charge is 6.0 nC.