FQP3N80C/FQPF3N80C is a 800V N-Channel MOSFET manufactured by Fairchild using Fairchild's proprietary planar stripe DMOS technology. It has low on-state resistance, high switching speed, high energy pulse resistance and improved dv/dt capability.
This document provides technical specifications for the Fairchild FQP3N80C and FQPF3N80C N-Channel enhancement mode power field effect transistors. These devices utilize Fairchild's proprietary planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance for high efficiency switch mode power supplies.
The datasheet details absolute maximum ratings, electrical characteristics, and typical characteristics including on-resistance, capacitance, and switching times. It also includes package dimensions for the TO-220 and TO-220F packages and outlines trademarks and product status definitions.
| Drain-Source Voltage | 800 V |
|---|---|
| Continuous Drain Current (Tg = 25°C) | 3 A |
| Power Dissipation (Tg = 25°C) | 107 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Package Type | TO-220, TO-220F |
The maximum drain-source voltage is 800 V.
The typical gate charge is 13 nC.
The typical on-resistance is 4.82 Ohms at Vgs = 10 V.