This document describes the features and characteristics of the FQP3N60C 600V N-Channel MOSFET, including 3A current, low gate charge, fast switching, 100% avalanche tested, etc.
The document describes the Fairchild FQP3N60C, a 600V N-Channel enhancement mode power field effect transistor produced using Fairchild's proprietary planar stripe, DMOS technology. These devices are designed for high efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts based on half bridge topology.
| Drain-Source Voltage | 600 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 3 A |
| Continuous Drain Current (Tj = 100°C) | 1.8 A |
| Pulsed Drain Current | 12 A |
| Gate-Source Voltage | +30 V |
| Single Pulsed Avalanche Energy | 150 mJ |
| Power Dissipation (Tc = 25°C) | 75 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction-to-Case | 1.67 °C/W |
| Thermal Resistance, Junction-to-Ambient | 62.5 °C/W |
| Drain-Source Breakdown Voltage | 600 V |
| Gate Threshold Voltage | 2.0 - 4.0 V |
| Total Gate Charge | 10.5 - 14 nC |
The maximum continuous drain current at a junction temperature of 25°C is 3 A.
The maximum gate-source voltage is +30 V.
The single pulsed avalanche energy rating is 150 mJ.
The operating and storage temperature range is from -55°C to +150°C.