A technical document about QFET device technology and QFET device applications
This document provides the design specifications for the Fairchild FQP34N20, an N-Channel enhancement mode power field effect transistor produced using proprietary DMOS technology. The device is optimized for high efficiency switching applications such as DC/DC converters, switch mode power supplies, and motor control.
| Drain-Source Voltage | 200 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | 31 A |
| Continuous Drain Current (Tc = 100°C) | 20 A |
| Power Dissipation (Tc = 25°C) | 180 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Package Type | TO-220 |
The device operates and stores within a temperature range of -55 to +150 °C.