This document describes the features and characteristics of the FQP32N20C/FQPF32N20C N-Channel enhancement mode power field effect transistors. These transistors are produced using Fairchild's proprietary planar stripe DMOS technology, which minimizes on-state resistance, provides superior switching performance, and withstands high energy pulse. They are suitable for high efficiency switching DC/DC converters, switch mode power supplies, uninterrupted power supplies, and motor controls.
This document provides design specifications for the FQP32N20C and FQPF32N20C N-Channel MOSFETs. These devices utilize Fairchild's proprietary planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance. They are designed for high efficiency applications such as DC/DC converters, switch mode power supplies, and motor controls.
| Drain-Source Voltage | 200 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | 28.0 A |
| Pulsed Drain Current | 112 A |
| Gate-Source Voltage | +30 V |
| Power Dissipation (Tc = 25°C) | 156 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
The device can withstand a single pulsed avalanche energy of up to 955 mJ.
The leads can be exposed to a maximum temperature of 300°C for 1/8" from the case for 5 seconds.