This document is a datasheet for the Fairchild FQP30N06, an N-Channel enhancement mode power field effect transistor. The device utilizes Fairchild's proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance. It is designed for low voltage applications such as automotive systems, DC/DC converters, and portable battery-operated products.
| Drain-Source Voltage | 60 V |
|---|---|
| Continuous Drain Current | 30 A |
| On-Resistance | 0.04 Ω |
| Gate Charge | 19 nC |
| Reverse Transfer Capacitance | 40 pF |
| Maximum Junction Temperature | 175 °C |
| Package Type | TO-220 |
The maximum junction temperature rating is 175 °C.
Yes, the device is 100% avalanche tested.
The typical gate charge is 19 nC.