This is the Fairchild Semiconductor datasheet for the FQP2N80, an 800 V N-Channel enhancement mode power field effect transistor produced with Fairchild's planar stripe DMOS technology. The document describes the device as suited for high efficiency switch mode power supply, with features listed as 2.4 A and 800 V ratings, low gate charge, low Crss, fast switching, 100% avalanche tested and improved dv/dt capability.
The datasheet gives absolute maximum ratings, thermal characteristics, electrical characteristics (off, on, dynamic, switching and drain-source diode), typical characteristic curves, test circuits and waveforms, and TO-220 package dimensions. It closes with trademark, disclaimer, life support policy and product status information. It is dated Rev. A, September 2000.
| Drain-Source Voltage | 800 V |
|---|---|
| Drain Current, Continuous (TC = 25°C) | 2.4 A |
| Drain Current, Pulsed | 9.6 A |
| Static Drain-Source On-Resistance (max) | 6.3 Ω at VGS = 10 V, ID = 1.2 A |
| Gate Threshold Voltage | 3.0 V min, 5.0 V max |
| Total Gate Charge (typical) | 12 nC |
| Input Capacitance | 425 pF typical, 550 pF max |
| Power Dissipation (TC = 25°C) | 85 W |
| Single Pulsed Avalanche Energy | 180 mJ |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Package | TO-220 |
The drain-source voltage rating is 800 V.
The continuous drain current is 2.4 A at TC = 25°C and 1.52 A at TC = 100°C.
Yes, the datasheet lists 100% avalanche tested among the device features.
The package dimensions section shows the TO-220 package.