This is a product introduction document about QFET technology. It introduces the features and characteristics of QFET technology, as well as the application of this technology in electronic products.
The document describes the Fairchild FQP2N90, an N-Channel enhancement mode power MOSFET produced using proprietary planar stripe DMOS technology. It is designed to minimize on-state resistance and provide superior switching performance for high efficiency switch mode power supply applications.
Key specifications include a drain-source voltage rating of 900V, a continuous drain current of 2.2A at 25°C, and low gate charge characteristics. The device features fast switching capabilities and is 100% avalanche tested.
| Drain-Source Voltage | 900 V |
|---|---|
| Continuous Drain Current (25°C) | 2.2 A |
| Power Dissipation (25°C) | 85 W |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | TO-220 |
The typical gate charge is 12 nC.
Yes, the devices are 100% avalanche tested.