The document describes a product with features and characteristics. The product has multiple functions and advantages, suitable for various scenarios and needs.
This document provides technical specifications for the FQD2N90 and FQU2N90, which are 900V N-Channel enhancement mode power MOSFETs produced using Fairchild's proprietary planar stripe DMOS technology. These devices are designed to minimize on-state resistance while providing superior switching efficiency and withstanding high energy pulses in avalanche and commutation modes.
The datasheet details absolute maximum ratings, electrical characteristics including off and on states, dynamic parameters such as capacitance and gate charge, and typical performance curves. It also includes package dimensions for the TO-252 (DPAK) and I-PAK configurations.
| Drain-Source Voltage | 900 V |
|---|---|
| Continuous Drain Current (25°C) | 17 A |
| Pulsed Drain Current | 68 A |
| Gate-Source Voltage | +30 V |
| Single Pulsed Avalanche Energy | 170 mJ |
| Power Dissipation (Ta = 25°C) | 25 W |
| Operating Temperature Range | -55 to +150 °C |
The maximum lead temperature allowed for soldering is 300 °C.