FQU30N06 N-Channel MOSFET is a power field effect transistor manufactured by Fairchild Corporation. This device uses Fairchild's proprietary planar stripe DMOS technology. This technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation mode. It is well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
The document describes the FQD30N06 and FQU30N06 as N-Channel enhancement mode power field effect transistors produced using Fairchild's proprietary planar stripe DMOS technology. These devices are designed for low voltage applications such as automotive systems, DC/DC converters, and portable battery-operated products, offering features like low on-state resistance and fast switching capabilities.
| Drain-Source Voltage | 60 V |
|---|---|
| Continuous Drain Current (TC = 25°C) | 22.7 A |
| Static Drain-Source On-Resistance | 0.045 Ω |
| Maximum Junction Temperature | 150 °C |
| Total Gate Charge (Typical) | 19 nC |
| Reverse Transfer Capacitance (Typical) | 40 pF |
| Package Types | I-PAK, D-PAK |
The maximum junction temperature rating is 150°C.
The typical total gate charge is 19 nC.
The device is available in I-PAK and D-PAK packages.