QD3N60C/FQU3N60C N-Channel enhancement mode power field effect transistor, rated voltage 600V, rated current 2.4A, good switching characteristics, no external resistance, suitable for switch power supplies, electronic lamp ballasts and other occasions.
This datasheet describes the Fairchild Semiconductor FQD3N60C and FQU3N60C, which are N-Channel enhancement mode power field effect transistors produced using proprietary planar stripe DMOS technology. These devices are designed to minimize on-state resistance and provide superior switching performance, making them well-suited for high efficiency switched mode power supplies and electronic lamp ballasts based on half bridge topology.
The document provides comprehensive technical data including absolute maximum ratings, electrical characteristics, thermal characteristics, and typical performance characteristics. It also details package marking and ordering information for D-PAK and I-PAK packages, along with mechanical dimensions and test circuit diagrams.
| Drain-Source Voltage | 600 V |
|---|---|
| Continuous Drain Current (Tg = 25°C) | 2.4 A |
| Continuous Drain Current (Tg = 100°C) | 1.5 A |
| Pulsed Drain Current | 9.6 A |
| Gate-Source Voltage | +30 V |
| Single Pulsed Avalanche Energy | 150 mJ |
| Power Dissipation (Tc = 25°C) | 50 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction-to-Case | 25 °C/W |
| Thermal Resistance, Junction-to-Ambient (PCB Mount) | 50 °C/W |
| Total Gate Charge | 10.5 nC (Typ) |
| Drain-Source Diode Forward Voltage | 1.4 V (Max) |
These devices are well suited for high efficiency switched mode power supplies and electronic lamp ballasts based on half bridge topology.
The operating and storage temperature range is from -55 to +150 °C.
The devices are available in D-PAK and I-PAK packages.