This document describes the features and characteristics of FQD3P50 / FQU3P50 500V P-Channel MOSFET, including low on-state resistance, low gate charge, and fast switching speed.
This document provides technical specifications and characteristics for the Fairchild Semiconductor FQD3P50 and FQU3P50 series of 500V P-Channel MOSFETs. These devices utilize proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance, making them suitable for electronic lamp ballast applications based on complimentary half bridge configurations.
The datasheet details absolute maximum ratings, electrical characteristics including off and on states, dynamic parameters such as capacitance and gate charge, and typical performance curves. It also includes mechanical dimensions for the TO-252 (DPAK) package and outlines test circuit conditions used to verify device performance.
| Drain-Source Voltage | -500 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | -2.1 A |
| Power Dissipation (Ta = 25°C) | * 25 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction-to-Case | = 25 °CAN |
| Package Type | TO-252 (DPAK) |
The maximum continuous drain current at a case temperature of 25°C is -2.1 A.
Yes, the document states that these devices are RoHS Compliant.