Fairchild Semiconductor FQD4N20/FQU4N20 200V N-Channel MOSFET Datasheet

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Fairchild Semiconductor FQD4N20/FQU4N20 200V N-Channel MOSFET Datasheet - cover page
Brand
Fairchild
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
9
File format
PDF
File size
819 KB
Published
12 July, 2012
Updated
30 September, 2023
MD5 checksum
F4BB6AA551BC509173EA0609CC68BC9A

About this manual

This document is a datasheet for the Fairchild Semiconductor FQD4N20 and FQU4N20 N-Channel enhancement mode power field effect transistors. These devices utilize proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance. They are specifically suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply, and motor control applications.

What's inside

  • General Description
  • Absolute Maximum Ratings
  • Thermal Characteristics
  • Electrical Characteristics
  • Typical Characteristics
  • Package Dimensions
  • Test Circuits

Specifications

Drain-Source Voltage200 V
Continuous Drain Current (Tj = 25°C)3.0 A
On-State Resistance112 mΩ (Typ)
Total Gate Charge6.5 nC (Max)
Operating Temperature Range-55 to +150 °C
Package TypeTO-252 (DPAK)

Frequently asked questions

What applications are these MOSFETs designed for?

These devices are suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterrupted power supply, and motor control.

What is the maximum continuous drain current at 25°C?

The maximum continuous drain current is 3.0 A when the junction temperature is 25°C.

What is the maximum drain-source voltage rating?

The maximum drain-source voltage rating is 200 V.

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