This document provides the absolute maximum ratings and electrical characteristics of the 2N7051 NPN epitaxial silicon transistor. It includes parameters such as collector-emitter voltage, collector-base voltage, emitter-base voltage, collector current, and storage temperature.
The document describes the 2N7051, an NPN epitaxial silicon Darlington transistor designed for applications requiring high gain at collector currents up to 1.0A and a high breakdown voltage of 100V.
Key specifications include a maximum collector current of 1.5 A, a transition frequency (fT) of 200 MHz, and a total device dissipation of 625 mW for the TO-92 package.
| Collector-Emitter Voltage (VCEO) | 100 V |
|---|---|
| Collector Current (IC) | 1.5 A |
| Storage Temperature Range | -55 ~ 150 °C |
| DC Current Gain (hFE) | 10,000 to 20,000 |
| Transition Frequency (fT) | 200 MHz |
| Total Device Dissipation | 625 mW |
The maximum collector current rating is 1.5 A.
Yes, it is designed for applications requiring extremely high gain at collector currents to 1.0A.
The Collector-Emitter Breakdown Voltage (BVceo) is 100 V.