The FQA36P15 / FQA36P15_F109 150V P-Channel MOSFET is a high-efficiency, fast switching P-channel enhancement mode power field effect transistor produced by Fairchild Semiconductor Corporation. This device uses Fairchild's proprietary planar stripe DMOS technology to improve switching speed, reduce on-state resistance and withstand high energy pulses in the avalanche and commutation mode, while also improving dv/dt capability.
This document is a datasheet for the Fairchild Semiconductor FQA36P15, a P-Channel enhancement mode power field effect transistor. The device utilizes the company's proprietary planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance. It is designed for applications such as high efficient switched mode power supplies and active power factor correction.
| Drain-Source Voltage | -150 V |
|---|---|
| Continuous Drain Current (25°C) | -36 A |
| Continuous Drain Current (100°C) | -25.5 A |
| Gate-Source Voltage | +30 V |
| Maximum Junction Temperature | 175°C |
| Package Type | TO-3PN |
| Total Gate Charge (Typical) | 81 nC |
The maximum junction temperature rating is 175°C.
The typical gate charge is 81 nC.
The typical static drain-source on-resistance is 0.092 Ohms.