This document introduces the overview, main features and advantages of QFET, and provides application cases of QFET in communication networks and computer storage.
This document is a datasheet for the Fairchild Semiconductor FQA40N25, an N-Channel enhancement mode power field effect transistor. The device utilizes the proprietary QFET™ planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance. It is designed for high efficiency switching DC/DC converters and switch mode power supply applications.
| Drain-Source Voltage | 250 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | 40 A |
| Continuous Drain Current (Tc = 100°C) | 25 A |
| Pulsed Drain Current | 160 A |
| Gate-Source Voltage | +30 V |
| Single Pulsed Avalanche Energy | 800 mJ |
| Power Dissipation (Tc = 25°C) | 280 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction-to-Case | 0.45 °C/W |
| Static Drain-Source On Resistance | 0.051 to 0.07 Ω |
| Input Capacitance | 3100 to 4000 pF |
| Turn-On Delay Time | 70 to 150 ns |
It is well suited for high efficiency switching DC/DC converters and switch mode power supply.
The maximum continuous drain current at 25°C is 40 A.