The document describes the features and characteristics of QFET products.
The document describes the Fairchild FQA27N25, an N-Channel enhancement mode power field effect transistor produced using proprietary planar stripe DMOS technology. The device is designed to minimize on-state resistance and provide superior switching performance for high efficiency DC/DC converters and switch mode power supplies.
| Drain-Source Voltage | 250 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | 27 A |
| Power Dissipation (Tc = 25°C) | 210 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
The typical on-state resistance (Rds(on)) at Vgs = 10V and Id = 13.5A is 0.083 Ohms.
The maximum allowable Gate-Source Voltage (Vgs) is +30 V.