The FQA19N60 is a N-channel enhancement mode power field effect transistor produced by Fairchild. It uses Fairchild's proprietary planar stripe DMOS technology, which features ultra-low on-state resistance, superior switching performance, and high-energy pulse handling capability. It is well suited for high efficiency switch mode power supplies.
This document provides design specifications and technical data for the FQA19N60 MOSFET. Produced using proprietary planar stripe DMOS technology, this device is tailored to minimize on-state resistance and provide superior switching performance. It features a maximum drain-source voltage of 600V and a continuous drain current of 18.5A at 25°C.
| Drain-Source Voltage | 600 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 18.5 A |
| Total Gate Charge | Typical 70 nC |
| Operating Temperature Range | -55 to +150 °C |