The FQA32N20C 200V N-Channel MOSFET is a Fairchild-produced enhancement mode N-channel power field-effect transistor that uses Fairchild's proprietary planar DMOS technology. It has a low on-state resistance, excellent switching performance, and a high energy pulse withstand capability. It is suitable for high-efficiency switching DC/DC converters and switch-mode power supplies.
This document describes the Fairchild FQA32N20C, an N-Channel enhancement mode power field effect transistor produced using proprietary planar DMOS technology. The device is designed to minimize on-state resistance and provide superior switching performance for high efficiency DC/DC converters and switch mode power supplies.
| Drain-Source Voltage | 200 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 32 A |
| Power Dissipation (Tc = 25°C) | 204 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
The typical on-state resistance (Rds(on)) at Vgs=10V and Id=16A is 0.082 Ω.
The device can withstand a single pulsed avalanche energy of 955 mJ.
The typical total gate charge (Qg) at Vgs = 160V and Id=32A is 82.5 nC.